1MBI1600UC-170 Datasheet, PDF (10/13 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=0.5Ω, Rgoff=0.9Ω, Tj= １25°C
10
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1600A, VGE=±15V, Tj= 125°C
10.0
toff
1 _ton
tf
tr
0.1
toff
1.0
ton
tr
tf
0.01
0
500
1000
1500
2000
Collector current : Ic [ A ]
2500
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=0.5Ω, Rgoff=0.9Ω,Tj=125°C
1000
Eoff
800
Eon
600
Err
400
200
0
0 400 800 1200 1600 2000 2400 2800
Collector current : Ic [ A ] , Forward current : IF [ A ]
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
Reverse bias safe operating area (max.)
±VGE=15V,Tj = 125°C / chip
500
1000
1500
Collector - Emitter voltage : VCE [ V ]
2000
0.1
0.1
1.0
10.0
Gate resistance : Rg [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1600A, VGE=±15V, Tj= 125°C
4000
3200
2400
1600
800
0
0.1
Eon
Eoff
Err
1.0
10.0
Gate resistance : Rg [ Ω ]
100.0
MS5F5928
10
13
H04-004-03a