English
Language : 

YA875C15R Datasheet, PDF (1/5 Pages) Fuji Electric – Ultra Low IR Schottky Barrier Diode
YA875C15R (150V, 20A)
Ultra Low IR Schottky Barrier Diode
Features
• Ultra Low IR
• Low VF
• Tj MAX = 175˚C
• High reliability at higher temperatures
Applications
• High frequency operation
• DC-DC converters
• AC adapter
Outline Drawings [mm]
TO-220AB
YA875C15
YA875C15
Note:1 Country of origin mark.
"P" is Made in PHILIPPINES.
http://www.fujisemi.com
FUJI Diode
Connection diagram
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Average output current
IO
Non-repetitive surge current **
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
*Out put current of center tap full wave connection.
**Rating per element
Conditions
50Hz Square wave duty =1/2
Tc =143˚C
Sine wave, 10ms 1shot
Ratings
150
20 *
145
175
-40 to +175
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Symbols
Forward voltage***
VF
Reverse current***
IR
Thermal resistance
Rth(j-c)
***Rating per element
Conditions
IF = 10 A
VR =VRRM
Junction to case
Maximum
0.89
20
1.75
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
Ratings
0.3 to 0.5
2.0
Units
V
A
A
˚C
˚C
Units
V
µA
˚C/W
Units
N•m
g
1