TS865C10R Datasheet, PDF (1/3 Pages) Fuji Electric – Low IR Schottky barrier diode

TS865C10R (100V/20A)
Low IR Schottky barrier diode
[200509]
Outline drawings, mm
Features
Low IR
Low VF
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
10^+0.5
4.5 ^±0.2
1.32
1.2 ^±0.2
+0.2
0.8 —0.1
5.08
0.4 ^+0.2
2.7
1. Gate
2, 4. Drain
3. Source
Package : T-pack
Epoxy resin UL : V-0
Connection diagram
1
2
3
Maximum ratings and characteristics
Maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak surge reverse voltage VRSM tw=500ns, duty=1/40
100
V
Repetitive peak reverse voltage
VRRM
100
V
Isolating voltage
Viso
Terminals-to-Case, AC.1min.
1500
V
Average output current
Io
Square wave, duty=1/2
Tc=117°C
20
*
A
Non-repetitive surge current
IFSM
Sine wave 10ms
145
A
non-repetitive reverse surge power dissipation PRM
tw=10µs, Tj=25°C
660
W
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
VF
IR
Rth(j-c)
Conditions
IF=10A
VR=100V
Junction to case
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
Max.
0.86
175
1.75
Unit
V
µA
°C/W
**Rating per element
0.3 to 0.5
N·m
2
g