TP858C12R Datasheet, PDF (1/6 Pages) Fuji Electric – Schottky Barrier Diode

TP858C12R
Schottky Barrier Diode
http://www.fujisemi.com
FUJI Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Average output current
Io
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
IFSM
Tj
Tstg
Conditions
-
50Hz square wave duty =1/2
Tc =106˚C
Sine wave, 10ms 1shot
-
-
Ratings
120
30*
110
150
-40 to +150
Units
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
Conditions
VF
IF = 15 A
IR
VR =VRRM
Rth(j-c) Junction to case
Maximum
1.01
200
1.25
Units
V
µA
˚C/W
Mechanical characteristics
Item
Approximate mass
Conditions
-
Maximum
1.6
Units
g
1