MS868C15 Datasheet, PDF (1/6 Pages) Fuji Electric – Schottky Barrier Diode

MS868C15
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak surge reverse voltage
VRSM
Repetitive peak reverse voltage
VRRM
Average output current
Io
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
IFSM
Tj
Tstg
Conditions
tw=500ns, duty=1/40
-
Square wave duty =1/2
Tc = 113˚C
Sine wave, 10ms
-
-
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
Conditions
VF
IF = 15 A
IR
VR =150V
Rth(j-c) Junction to case
Mechanical characteristics
Item
Approximate mass
Conditions
-
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FUJI Diode
Ratings
150
150
30*
190
150
-40 to +150
Units
V
V
A
A
˚C
˚C
Maximum
0.90
200
1.2
Units
V
µA
˚C/W
Maximum
0.8
Units
g
1