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MS868C12 Datasheet, PDF (1/5 Pages) Fuji Electric – Low IR Schottky Barrier Diode | |||
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MS868C12 (120V, 30A)
Low IR Schottky Barrier Diode
Features
⢠Low IR
⢠Low VF
⢠Center tap connection
Applications
⢠High frequency operation
⢠DC-DC converters
⢠AC adapter
Outline Drawings [mm]
TFP
868C12
868C12
http://www.fujisemi.com
FUJI Diode
Connection diagram
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25ËC Unless otherwise specified)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Average output current
IO
Non-repetitive surge current **
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
*Out put current of center tap full wave connection.
**Rating per element
Conditions
Square wave duty =1/2
Tc =115ËC
Sine wave, 10ms 1shot
Ratings
120
30 *
190
150
-40 to +150
Electrical characteristics (at Ta=25ËC Unless otherwise specified)
Item
Symbols
Forward voltage***
VF
Reverse current***
IR
Thermal resistance
Rth(j-c)
***Rating per element
Conditions
IF = 15 A
VR =VRRM
Junction to case
Maximum
0.88
200
1.2
Mechanical characteristics
Item
Approximate mass
Conditions
Ratings
0.8
Units
V
A
A
ËC
ËC
Units
V
µA
ËC/W
Units
g
1
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