MS838C04 Datasheet, PDF (1/5 Pages) Fuji Electric – Schottky Barrier Diode

MS838C04 (40V/30A)
Schottky Barrier Diode
Features
• Low VF
• Super high speed switching
• High reliability by planer design
Applications
• High speed power switching
Outline Drawings [mm]
TFP
838C04
838C04
http://www.fujisemi.com
FUJI Diode
Connection diagram
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Average output current
IO
Non-repetitive surge current **
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
*Out put current of center tap full wave connection.
**Rating per element
Conditions
Square wave duty =1/2
Tc =111˚C
Sine wave, 10ms 1shot
Ratings
40
30 *
180
150
-40 to +150
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Symbols
Forward voltage***
VF
Reverse current***
IR
Thermal resistance
Rth(j-c)
***Rating per element
Conditions
IF = 12.5 A
VR =VRRM
Junction to case
Maximum
0.53
8
1.2
Mechanical characteristics
Item
Approximate mass
Conditions
Ratings
0.8
Units
V
A
A
˚C
˚C
Units
V
mA
˚C/W
Units
g
1