MB85R256F Datasheet, PDF (1/36 Pages) Fujitsu Component Limited. – 256 K (32 K × 8) ビット

FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00011-6v0-J
ϝϞϦ FRAM
256 K (32 K ʷ 8) Ϗοτ
MB85R256F
■ ֓ཁ
MB85R256F ͸ , ෆൃشੑϝϞϦηϧΛܗ੒͢Δڧ༠ిମϓϩηεͱγϦίϯήʔτ CMOS ϓϩηεΛ༻͍ͨ 32,768
ϫʔυʷ 8 Ϗοτߏ੒ͷ FRAM (Ferroelectric Random Access Memoryɿڧ༠ిମϥϯμϜΞΫηεϝϞϦ ) Ͱ͢ɻ
MB85R256F ͸ , SRAM ͷΑ͏ʹσʔλόοΫΞοϓ༻όοςϦΛ࢖༻͢Δ͜ͱͳ͘σʔλอ͕࣋ՄೳͰ͢ɻ
MB85R256F ʹ࠾༻͍ͯ͠ΔϝϞϦηϧ͸ , ॻࠐΈ / ಡग़͠ಈ࡞ͰόΠτ͋ͨΓ࠷௿ 10¹² ճͷ଱ੑ͕͋Γ , ϑϥογϡϝ
ϞϦ΍ E²PROM ͷॻ͑׵Մೳճ਺Λେ্͖͘ճΓ·͢ɻ
MB85R256F ͸ैདྷͷඇಉ ظSRAM ʹ४ٖͨ͡ࣅ SRAM ΠϯλϑΣʔεΛ࠾༻͍ͯ͠·͢ɻ
■ ಛ௕
ɾ Ϗοτߏ੒
ɾ ॻࠐΈ / ಡग़͠଱ੑ
ɾ σʔλอ࣋ಛੑ
ɾ ಈ࡞ిిݯѹ
ɾ ௿ফඅిྗ
ɾ ಈ࡞पғԹ౓
ɾ ύοέʔδ
ɿ32,768 ϫʔυʷ 8 Ϗοτ
É¿10¹² Õ³ / όΠτ
ɿ10 ೥ ( ʴ 85 °C), 95 ೥ ( ʴ 55 °C), 200 ೥Ҏ্ ( ʴ 35 °C)
ɿ2.7 V ʙ 3.6 V
ɿಈ࡞ి ྲྀిݯ5 mA( ඪ४ )
ελϯόΠిྲྀ 5μA( ඪ४ )
ɿʵ 40 °C ʙʴ 85 °C
ɿϓϥενοΫɾSOP,28 ϐϯ (FPT-28P-M17)
ϓϥενοΫɾSOP,28 ϐϯ (FPT-28P-M01)
ϓϥενοΫɾTSOP (1),28 ϐϯ (FPT-28P-M19)
྆ύοέʔδ඼ ʹڞRoHS ࢦྩʹద߹͍ͯ͠·͢ɻ
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