FMV16N50ES Datasheet, PDF (1/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV16N50ES
Super FAP-E^3S series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Outline Drawings [mm]
TO-220F(SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Isolation Voltage
VISO
Characteristics
500
500
±16
±64
±30
16
485
8
4.8
100
2.16
80
150
-55 to + 150
2
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
kVrms
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
QSW
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
ID=8A, VGS=10V
ID=8A, VDS=25V
VDS=25V
VGS = 0V
f=1MHz
Vcc = 30 0V
VGS=10V
ID=8A
RGS=18Ω
Vcc =250V
I D =16A
VGS=10V
L=1.52mH, Tch=25°C
IF=16A, VGS=0V, Tch=25°C
IF=16A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch =25°C
Tch =125°C
min.
500
3.7
-
-
-
-
5.5
-
-
-
-
-
-
-
-
-
-
-
16
-
-
-
typ.
-
4.2
-
-
10
0.33
11
1700
210
13
37
30
87
17
48
17
18
7
-
0.90
0.46
6.0
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS=7A, L=18.1mH, Vcc=50V, RG=50Ω.
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=4.8kV/μs, Vcc≤BVDSS, Tch≤150°C.
max.
-
4.7
25
250
100
0.38
-
2550
315
19.5
55.5
45
130.5
25.5
72
25.5
27
10.5
-
1.35
-
-
max.
1.560
58.0
Unit
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Unit
°C/W
°C/W
1