FMH20N60S1 Datasheet, PDF (1/7 Pages) Fuji Electric – N-Channel enhancement mode power MOSFET

FMH20N60S1
Super J-MOS series
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Outline Drawings [mm]
TO-3P(Q)
15.5max
13 ± 0.2
10 ± 0.2
φ3.2± 0.1
1.5±0.2
4.5±0.2
1.6
+0.3
-0.1
2.2
+0.3
-0.1
5.45 ± 0.2
1.6
+0.3
-0.1
PRE-SOLDER
1.1
+0.2
-0.1
5.45 ± 0.2
0.5
+0.2
0
1.5
CONNECTION
1 GATE
2 DRAIN
3 SOURCE
DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Symbol
VDS
VDSX
ID
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
IDP
VGS
IAR
EAS
dVDS/dt
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C.
Characteristics
600
600
±20
±12.6
±60
±30
6.6
472.2
50
15
100
2.5
140
150
-55 to +150
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
Remarks
VGS=-30V
TC=25°C
TC=100°C
Note*1
Note*1
Note *2
Note *3
VDS≤ 600V
Note *4
Note *5
Ta=25°C
TC=25°C
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