FAP-450 Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET(500V, 0,38Ω, 14A, 190W)

> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V_GS = ± 30V Guarantee
- Repetitive Avalanche Rated
FAP-450
FAP-IIS Series
N-channel MOS-FET
500V 0,38Ω 14A 190W
> Outline Drawing
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
500
V
Continous Drain Current
ID
14
A
Pulsed Drain Current
I D(puls)
56
A
Gate-Source-Voltage
Avalanche Current
Maximum Avalanche Energy
V GS
I AR
E AS
±30
V
14^*2
A
760^*1
mJ
Max. Power Dissipation
PD
190
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
*1) V_CC = 50V; L = 7mH; I_AS = 14A; R_G = 50 Ω; Starting T_ch = 25°C (See Fig. 1 & 2)
*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature
> Equivalent Circuit
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
I_D=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=250µA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=500V T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I GSS
V_GS=±30V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=8A
V_GS=10V
Forward Transconductance
g fs
I_D=8A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=250V
tr
V_GS=10V
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
R_G = 6,1W
Avalanche Capability
tf
R_D = 20Ω
I AV
L = 100µH
T_ch=25°C
Total Gate Charge
C iss
V_CC=400V
Gate-Source Charge
C oss
V_GS=10V
Gate-Drain Charge
C rss
I_D = 14A
Diode Forward On-Voltage
V SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=I_DR V_GS=0V
Reverse Recovery Charge
Q rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
500
V
3,0
3,0 4,0 V
25 µA
1,0 mA
10 100 nA
0,32 0,38 Ω
7
14
S
2200
pF
330
pF
140
pF
18
ns
70
ns
130
ns
70
ns
4
A
170 nC
20 nC
90 nC
1,0 1,5 V
700
ns
9,0
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to ambient
channel to case
Min. Typ. Max. Unit
35 °C/W
0,65 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX [phone] - http://www.collmer.com
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com