6R1MBI75P-160 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A

6R1MBi75P-160
Diode Module
Diode Module with Brake
Diode:1600V / 75A, IGBT:1400A/50A
Features
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol Condition
Rating
Unit
Repetitive peak reverse voltage
VRRM
1600
V
Non-repetitive peak reverse voltage
VRSM
1760
V
Average output current
IO
50Hz/60Hz sine wave
75
A
Tc=115°C
One cycle surge current
IFSM
From rated load
600
A
I²t
I²t
From rated load
1440
A²s
Operation junction temperature
2007. ^{Collector-Emitter voltage}
Gate-Emitter voltage
arch ^{Collector current}
obsoletdeeosnigmn. ^{Collector power disspation}
Repetitive peak reverse voltage
scheduled ^{be new Operation junction temperature}
for ^{Storage junction temperature}
Isolation voltage
end ^{Mounting screw torque}
Tj
VCES
VGES
IC
ICP
PC
VRRM
Tj
Tstg
Viso
DC
1ms
1 device
Tc=25°C
Tc=75°C
Tc=25°C
Tc=75°C
AC : 1 minute
M5 screw
-40 to +125
1400
±20
50
35
100
70
240
1400
+150
-40 to +125
3000
2.0 to 2.5
product ^{is recomm Electrical characteristics (Tj=25°C unless otherwise specified)}
ot Item
Symbol
Condition
his ^{N Fofward voltage}
T ^{Reverse current}
VFM
IRRM
Tj=25°C, IFM=75A
Tj=150°C, VR=VRRM
Min.
Typ.
°C
V
V
A
A
W
V
°C
°C
V
N·m
Max.
1.35
15
Unit
V
mA
Zero gate voltage Collector current
ICES
VGE=0V. VCE=1400V
1.0
mA
Gate-Emitter leakage current
IGES
VCE=0V. VGE=±20V
200
nA
Collector-Emitter saturation voltage
VCE(sat)
VGE=15V. IC=35A
2.4
2.8
V
Turn-on time
ton
Vcc=800V
0.35
1.2
µs
Turn-off time
tr
Ic=35A
toff
VGE=±15V
0.25
0.6
0.45
1.0
Reverse current
tf
IRRM
RG=33ohm
0.08
0.3
1.0
mA
Thermal characteristics
Item
Thermal resistance
Thermal Resistance(Case to fine)
Symbol
Rth(j-c)
Rth(c-f)
Condition
Converter Per total loss
Per each device
Brake IGBT (1 device)
with thermal compound
Min.
Typ.
Max.
0.16
0.96
0.70
0.08
Unit
°C/W
°C/W