6MBP75RA-120 Datasheet, PDF (1/6 Pages) Fuji Electric – Intelligent Power Module ( R-Series )

6MBP 75RA-120
IGBT IPM
1200V
6x75A
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min.
Max.
DC Bus Voltage
VDC
0
900
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
VDC(Surge)
VSC
0
200
1000
800
V
Collector-Emitter Voltage
VCES
0
1200
Inverter
Continuous
IC
75
Collector
1ms
ICP
150
A
Current
Duty=62.6%
-IC
75
Collector Power Dissipation One Transistor PC
595
W
Voltage of Power Supply for Driver
VCC
Input Signal Voltage
VIN
0
0
20
VZ
V
Input Signal Current
IIN
1
mA
Alarm Signal Voltage
VALM
0
VCC
V
Alarm Signal Current
IALM
15
mA
Junction Temperature
Tj
150
Operating Temperature
TOP
-20
100
°C
Storage Temperature
Tstg
-40
125
Isolation Voltage
A.C. 1min.
Viso
2500
V
Screw Torque
Mounting *1
Terminals *1
3.5
3.5
Nm
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
n Outline Drawing
Items
Collector Current At Off Signal Input
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=1200V, Input Terminal Open
IC=75A
-IC=75A
Min.
Typ.
Max.
1.0
2.6
3.0
Units
mA
V
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Input Signal Threshold Voltage
ICCP
ICCN
VIN(th)
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
tALM
RALM
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
Surface Of IGBT Chip
Tj=125°C
Tj=25°C
Under Voltage Protection Level
VUV
Hysteresis
VH
Min.
3
10
1.00
1.25
110
150
113
1.5
1425
11.0
0.2
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
tON
Switching Time
tOFF
tRR
Conditions
IC=50A, VDC=600V
IF=50A, VDC=600V
Min.
0.3
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
1.35
1.60
8.0
20
20
10
2
1500
Typ.
Typ.
0.05
Max.
18
65
1.70
1.95
Units
mA
V
125
°C
A
µs
ms
1575
Ω
12.5
V
Max.
3.6
0.4
Units
µs
Max.
0.21
0.47
Units
°C/W