6MBI10GS-060 Datasheet, PDF (1/4 Pages) Fuji Electric – IGBT MODULE ( Single-in-Line )

IGBT MODULE ( Single-in-Line )
n Features
• Square RBSOA
• Low Saturation Voltage
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
n Outline Drawing
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
600
V
± 20
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
10
20
A
10
20
45
W
+150
°C
-40 ∼ +125 °C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
2000
V
Mounting *1
1.7
Nm
Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
n Equivalent Circuit
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=10mA
VGE=15V IC=10A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=10A
VGE=± 15V
RG=220Ω
IF=10A VGE=0V
IF=10A
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
5.5
Typ.
650
150
36
Max.
1.0
100
8.5
2.8
1.2
1.0
1.0
0.35
3.0
300
Units
mA
nA
V
V
pF
µs
V
ns
Min.
Typ.
0.06
Max.
2.78
4.50
Units
°C/W