2SK3989-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3989-01MR FUJI POWER MOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
VDSX
Ratings
600
600
Unit
V
V
Remarks
VGS=-30V
Continuous drain current
ID
3.0
A
Pulsed drain current
ID(puls]
±12.0
A
Gate-source voltage
VGS
Repetitive or non-repetitive
IAR
±30
3.0
V
A Note *1
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
VISO
237.3 mJ Note *2
2.1
20
5
21
2.16
+150
-55 to +150
2
mJ Note *3
kV/μs VDS ^<= 600V
kV/μs ^{Note *4}
W Tc=25°C
W Ta=25°C
°C
°C
kVrms ^{t=60sec, f=60Hz}
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF^<= -ID, -di/dt=50A/μs, Vcc ^<= BVDSS, Tch _=<150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=1.5A VGS=10V
ID=1.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=1.5A
VGS=10V
RGS=10 Ω
VCC=300V
ID=3.0A
VGS=10V
IF=3.0A VGS=0V Tch=25°C
IF=3.0A VGS=0V
-di/dt=100A/μs Tch=25°C
600
V
3.0
5.0
V
25
μA
250
100
nA
2.64
3.30 Ω
1.5 3.0
S
330
500
pF
50
75
2.5
5.0
11
18
ns
5.0
7.5
23
35
10
15
13
20
nC
5.5
8.5
2.8
4.2
1.00
1.50 V
0.5
μs
2.3
μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
5.952 °C/W
58.0 °C/W
http://www.fujielectric.co.jp/fdt/scd/
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