2SK3988-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3988-01 _{FUJI POWER MOSFET}
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
VDS
600
V
VDSX
600
V VGS=-30V
Continuous drain current
ID
3.0
A
Pulsed drain current
ID(puls]
±12.0
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
3.0
A Note *1
Non-repetitive
Maximum avalanche energy
EAS
237.3 ^{mJ Note *2}
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
EAR
dVDS/dt
dV/dt
6.0
20
5
mJ ^{Note *3}
kV/μs ^{VDS <=600V}
kV/μs ^{Note *4}
Maximum power dissipation
PD
Operating and storage
Tch
60
W
2.02 _W
+150
°C
Tc=25°C
Ta=25°C
temperature range
Tstg
-55 to +150 °C
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF_=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch _=<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250^μA VGS=0V
ID= 250^μA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=1.5A VGS=10V
Tch=25°C
Tch=125°C
ID=1.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=1.5A
VGS=10V
RGS=10 Ω
VCC=300V
ID=3.0A
VGS=10V
IF=3.0A VGS=0V Tch=25°C
IF=3.0A VGS=0V
-di/dt=100A/μs _Tch=25°C
Min. Typ. Max. Units
600
V
3.0
5.0 V
25
μA
250
100
nA
2.64
3.30 Ω
1.5 3.0
S
330
500
pF
50
75
2.5
5.0
11
18
ns
5.0
7.5
23
35
10
13
5.5
2.8
1.00
0.5
2.3
15
20
nC
8.5
4.2
1.50 V
μs
μC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.083 °C/W
62.0 °C/W
http://www.fujielectric.co.jp/fdt/scd/
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