2SK3983-01L Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3983-01L,S,SJ FUJIPOWERMOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
VDSX
Ratings
900
900
Unit
V
V
Remarks
VGS=-30V
Continuous drain current
ID
±2.6
A
Pulsed drain current
ID(puls]
±10.4
A
Gate-source voltage
VGS
Repetitive or non-repetitive
IAR
±30
2.6
V
A Note *1
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
349.1 mJ Note *2
9.0
40
5
90
1.67
+150
-55 to +150
mJ Note *3
kV/µs VDS ^<= 900V
kV/µs ^{Note *4}
W Tc=25°C
W Ta=25°C
°C
°C
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF^<= -ID, -di/dt=50A/µs, Vcc ^<= BVDSS, Tch _=<150°C
Outline Drawings [mm]
See to P4
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=1.3A VGS=10V
ID=1.3A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=1.3A
VGS=10V
RGS=10 Ω
VCC=450V
ID=2.6A
VGS=10V
IF=2.6A VGS=0V Tch=25°C
IF=2.6A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
900
3.0
1.3
Typ.
4.8
2.6
330
44
2.5
10.5
6.5
28
20
13
4.5
4.3
1.00
1.5
4.0
Max. Units
V
5.0
V
25
µA
250
100
nA
6.4
Ω
S
495
pF
66
5.0
15.8
ns
9.8
42
30
19.5
nC
6.5
6.8
1.50 V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
1.39
75.0
Units
°C/W
°C/W
1