2SK3929-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3929-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220F
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Symbol
VDS
VDSX
ID
Ratings
600
600
11
Unit
V
V
A
Remarks
VGS=-30V
Equivalent circuit schematic
Drain(D)
Pulsed Drain Current
ID(puls]
±44
A
Gate-Source Voltage
VGS
±30
V
Maximum Avalanche current
IAR
11
A Note *1
Gate(G)
Non-Repetitive
EAS
Maximum Avalanche Energy
439.1
mJ Note *2
Source(S)
Repetitive
EAR
7
mJ Note *3
Note *1:Tch _=< 150°C,Repetitive and Non-repetitive
Maximum Avalanche Energy
Note *2:StartingTch=25°C,IAS=5A,L=32.2mH,
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
dVDS/dt
dV/dt
20
kV/µs VDS_=< 600V
5
kV/µs Note *4
VCC=60V,RG=50Ω
EAS limited by maximum channel temperature
Peak Diode Recovery -di/dt
Max. Power Dissipation
-di/dt
PD
100
70
2.16
A/µs
W
Note *5
Tc=25°C
Ta=25°C
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
Operating and Storage
Tch
+150
°C
Temperature range
Tstg
-55 to +150 °C
maximum channel temperature.
See to the ‘Transient Theemal impedance’
Isolation Voltage
VISO
2
kVrms ^{t=60sec, f=60Hz}
graph
Note *4:IF_=< -ID, -di/dt=100A/µs,VCC_=< BVDSS,Tch=<150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Note *5:IF_=<-ID, dv/dt=5kV/µs,VCC_=< BVDSS,Tch=< 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=5.5A VGS=10V
ID=5.5A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V ID=5.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=300V
ID=11A
VGS=10V
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
600
3.0
5
Typ.
0.62
10
1100
150
8
17
7
40
8
30
9
10
1.00
120
0.6
Max. Units
V
5.0 V
25
µA
2.0 mA
100
nA
0.80 Ω
S
1650
pF
225
12
26
ns
11
60
12
45
nC
13.5
15
1.50 _V
250
ns
1.5 _µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.786 °C/W
58
°C/W
www.fujielectric.co.jp/fdt/scd
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