2SK3926-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3926-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220F
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
VDSX
Ratings
250
220
Unit
V
V
Remarks
VGS=-30V
Equivalent circuit schematic
Drain(D)
Continuous Drain Current
ID
34
A
Pulsed Drain Current
ID(puls]
±136
A
Gate-Source Voltage
VGS
±30
V
Maximum Avalanche current
IAR
34
A Note *1
Gate(G)
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
EAS
EAR
dVDS/dt
dV/dt
-di/dt
PD
Tch
Tstg
VISO
665.7
9.5
20
5
100
95
2.16
+150
-55 to +150
2
mJ Note *2
Source(S)
mJ Note *3
Note *1:Tch _=< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=14A,L=5.71mH,
kV/µs VDS_=< 250V
kV/µs Note *4
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
A/µs Note *5
and avalanch current.
W ^Tc=25°C
See to the ‘Avalanche Energy’ graph
Ta=25°C
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
°C
°C
See to the ‘Transient Theemal impedance’
kVrms ^{t=60sec, f=60Hz}
graph
Note *4:IF_=< -ID, -di/dt=100A/µs,VCC_=< BVDSS,Tch=<150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Note *5:IF_=<-ID, dv/dt=5kV/µs,VCC_=< BVDSS,Tch=< 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Min. Typ.
250
3.0
Max. Units
V
5.0 V
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
IDSS
IGSS
RDS(on)
gfs
Ciss
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=17A VGS=10V
ID=17A VDS=25V
VDS=75V
Tch=25°C
Tch=125°C
25
µA
2.0 mA
100
nA
85
110
mΩ
13
26
S
1850 2800
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V
f=1MH
VCC=48V ID=17A
VGS=10V
RGS=10 Ω
220
330
21
32
20
30
ns
19
29
56
85
19
29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
VSD
trr
Qrr
VCC=125V
ID=34A
VGS=10V
IF=34A VGS=0V Tch=25°C
IF=34A VGS=0V
-di/dt=100A/µs _Tch=25°C
56
85
nC
20
30
19
29
1.00
1.50 _V
140
250
ns
0.5
1.25 _µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58
°C/W
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