2SK3922-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3922-01
FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Outline Drawings [mm]
TFP
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Symbol
VDS
VDSX
ID
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
ID(puls]
VGS
IAR
EAS
dVDS/dt
dV/dt
PD
Operating and storage
Tch
temperature range
Tstg
Ratings
120
90
±67
±6.3
±268
±30
67
Unit Remarks
V
V VGS=-30V
A
A Ta=25°C Note *1
A
V
A _{Note *2}
719.1 ^{mJ Note *3}
27.0
20
5
2.02
270
+150
-55 to +150
mJ ^{Note *4}
kV/μs ^{VDS <=120V}
kV/μs ^{Note *5}
W _Ta=25°C Note*1
W _Tc=25°C
°C
°C
Foot Print Pattern
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1 Surface mounted on 1000mm²,t=1.6mm FR-4 PCB (Drain pad area:500mm²)
Note *2 Tch<=150°C
Note *3 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *4 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *5 IF_=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch _=<150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a) *1
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=33.5A VGS=10V
ID=33.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=33.5A
VGS=10V
RGS=10 Ω
VCC=60V
ID=67A
VGS=10V
IF=67A VGS=0V Tch=25°C
IF=67A VGS=0V
-di/dt=100A/μs Tch=25°C
Test Conditions
channel to case
channel to ambient
channel to ambient
Min. Typ. Max. Units
120
3.0
V
5.0 V
25
μA
250
100
nA
24.6
30.0 mΩ
14
28
S
1880 2820
pF
360
540
30
45
20
30
ns
35
53
50
75
23
35
52
78
nC
16
24
18
27
1.10
150
0.9
1.50 V
ns
μC
Min. Typ.
Max. Units
0.463 °C/W
87.0 °C/W
52.0 °C/W
1
http://www.fujielectric.co.jp/fdt/scd/