2SK3920-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3920-01 _{FUJI POWER MOSFET}
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
VDS
VDSX
ID
ID(puls]
VGS
IAR
120
90
67
±268
±30
67
V
V VGS=-30V
A
A
V
A _{Note *1}
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Operating and storage
EAS
dVDS/dt
dV/dt
PD
Tch
719.1
27.0
20
5
2.02
270
+150
mJ Note *2
mJ Note *3
kV/μs VDS ^<=120V
kV/μs Note *4
W _Ta=25°C
W _Tc=25°C
°C
temperature range
Tstg
-55 to +150 °C
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF_=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch _=<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250^μA VGS=0V
ID= 250^μA VDS=VGS
VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V VDS=0V
ID=33.5A VGS=10V
ID=33.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=33.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=60V
ID=67A
VGS=10V
IF=67A VGS=0V Tch=25°C
IF=67A VGS=0V
-di/dt=100A/μs _Tch=25°C
Min. Typ. Max. Units
120
3.0
100
V
5.0 V
25
μA
250
nA
24.6 30.0
mΩ
14
28
S
1880 2820
pF
360
540
30
45
20
30
ns
35
53
50
75
23
35
52
78
nC
16
24
18
27
1.10
150
0.9
1.50 _V
ns
μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
62.0 °C/W
http://www.fujielectric.co.jp/fdt/scd/
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