2SK3917-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3917-01MR FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAR
Ratings
450
450
4.3
±17.2
±30
4.3
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Note *1
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
EAS
dVDS/dt
dV/dt
PD
Operating and storage
temperature range
Isolation voltage
Tch
Tstg
VISO *6
211 mJ ^{Note *2}
2.1
20
5
2.16
21
+150
-55 to +150
2
mJ Note *3
kV/µs ^{VDS <= 450V}
kV/µs ^{Note *4}
W _Ta=25°C
W _Tc=25°C
°C
°C
kVrms ^{t=60sec, f=60Hz}
Note *1 Tch=150°C
Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF_=< -ID, -di/dt=50A/µs, Vcc ^<= BVDSS, Tch _=<150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=2.1A VGS=10V
ID=2.1A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=2.1A
VGS=10V
RGS=10 Ω
VCC=225V
ID=4.3A
VGS=10V
IF=4.3A VGS=0V Tch=25°C
IF=4.3A VGS=0V
-di/dt=100A/µs _Tch=25°C
450
V
3.0
5.0
V
25
µA
2.0
mA
100
nA
1.30
1.60 Ω
1.8 3.5
S
330
500
pF
50
75
2
4
11
17.5
ns
5.5
8.5
23
34.5
5.0
8.0
13.0
20
nC
6.0
9.0
2.5
3.8
1.00
1.50 V
280
ns
1.6
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
5.952 °C/W
58.0 °C/W
1