2SK3916-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3916-01 _{FUJI POWER MOSFET}
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
VDS
VDSX
ID
ID(puls]
VGS
IAR
450
450
4.3
±17.2
±30
4.3
V
V VGS=-30V
A
A
V
A _{Note *1}
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Operating and storage
EAS
dVDS/dt
dV/dt
PD
Tch
211
6
20
5
2.02
60
+150
mJ Note *2
mJ Note *3
kV/μs VDS ^<=450V
kV/μs Note *4
W _Ta=25°C
W _Tc=25°C
°C
temperature range
Tstg
-55 to +150 °C
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF_=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch _=<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250^μA VGS=0V
ID= 250^μA VDS=VGS
VDS=450V VGS=0V Tch=25°C
VDS=360V VGS=0V
VGS=±30V VDS=0V
Tch=125°C
ID=2.1A VGS=10V
ID=2.1A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=2.1A
VGS=10V
RGS=10 Ω
VCC=225V
ID=4.3A
VGS=10V
IF=4.3A VGS=0V Tch=25°C
IF=4.3A VGS=0V
-di/dt=100A/μs _Tch=25°C
Min.
450
3.0
1.8
Typ.
1.30
3.5
330
50
2
11
5.5
23
5.0
13.0
6.0
2.5
1.00
280
1.6
Max. Units
V
5.0 V
25
μA
2.0 mA
100
nA
1.60 Ω
S
500
pF
75
4
17.5 ^ns
8.5
34.5
8.0
20
nC
9.0
3.8
1.50 _V
ns
μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.083 °C/W
62.0 °C/W
http://www.fujielectric.co.jp/fdt/scd/
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