2SK3913-01MR_05 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3913-01MR FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAR
Ratings
250
220
14
±56
±30
14
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Note *1
Non-repetitive
Maximum avalanche energy
EAS
301.1 ^{mJ Note *2}
Repetitive
Maximum avalanche energy
3.7 mJ Note *3
Maximum drain-source dV/dt dVDS/dt
20
kV/μs VDS ^<= 250V
Peak diode recovery dV/dt
dV/dt
5
kV/μs Note *4
Peak diode recovery -di/dt
-di/dt
100
A/μs Note *5
Max. power dissipation
PD
2.16 _{W Ta=25°C}
37
W _Tc=25°C
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150 _°C
Isolation voltage
VISO *6
2
kVrms ^{t=60sec, f=60Hz}
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note
Note
*4
*5
IF _=<
IF
-ID,
-ID,
-di/dt=100A/μs,
-di/dt=100A/μs,
Vcc <
Vcc ^<=
BVDSS,
BVDSS,
Tch
Tch
<==<115500°°CC
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250μA
ID= 250μA
VGS=0V
VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=7A VGS=10V
ID=7A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=7A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=125V
ID=14A
VGS=10V
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/μs Tch=25°C
250
V
3.0
5.0 V
25
μA
2.0 mA
100
nA
220
280
mΩ
5
10
S
780 1170
pF
90
135
6
9
12
18
ns
3
4.5
23
35
6
9
22
33
nC
7
11
6
9
1.00
1.50 _V
120
250
ns
0.5
1.25 _μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
3.378 °C/W
58.0 °C/W
http://www.fujielectric.co.jp/fdt/scd/
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