2SK3913-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICO POWER MOSFET

2SK3913-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220F
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Equivalent circuit schematic
Drain-source voltage
VDS
VDSX
250
V
220
V
VGS=-30V
Drain(D)
Continuous Drain Current
ID
14
A
Pulsed Drain Current
ID(puls]
±56
A
Gate-Source Voltage
VGS
Maximum Avalanche current
IAR
±30
V
14
A
Note *1
Gate(G)
Non-Repetitive
EAS
301.1
mJ Note *2
Source(S)
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
EAR
dVDS/dt
dV/dt
3.7
20
5
mJ Note *3
kV/µs VDS_=< 250V
kV/µs Note *4
Note *1:Tch ^<=150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=6A,L=14.1mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
Peak Diode Recovery -di/dt
-di/dt
100
A/µs Note *5
See to the ‘Avalanche Energy’ graph
Max. Power Dissipation
PD
37
W
2.16
Tc=25°C
Ta=25°C
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
Operating and Storage
Tch
+150
°C
See to the ‘Transient Theemal impedance’
Temperature range
Tstg
-55 to +150 °C
graph
Isolation Voltage
VISO
2
kVrms t=60sec f=60Hz _{Note *4:IF<=-ID, -di/dt=100A/µs,VCC=< BVDSS,Tch=<150°C}
Electrical characteristics (Tc =25°C unless otherwise specified)
Note *5:IF_=< -ID, dv/dt=5kV/µs,VCC_=< BVDSS,Tch_=<150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=7A VGS=10V
ID=7A VDS=25V
VDS=75V
VGS=0V
f=1MH
VCC=48V ID=7A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=125V
ID=14A
VGS=10V
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
250
3.0
5
Typ.
220
10
780
90
6.0
12
3
23
6
22
7.0
6.0
1.00
120
0.5
Max. Units
V
5.0 V
25
µA
2
mA
100
nA
280
mΩ
S
1170
pF
135
9.0
18
ns
4.5
35
9
33
nC
11
9.0
1.50 _V
250
ns
1.25 _µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
3.378 °C/W
58
°C/W
www.fujielectric.co.jp/fdt/scd
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