2SK3891-01R Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3891-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200407
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
VDS
700
V
Continuous Drain Current
VDSX
ID
700
V
VGS=-30V
17
A
Equivalent circuit schematic
Pulsed Drain Current
Gate-Source Voltage
ID(puls]
VGS
±68
A
±30
V
Drain(D)
Non-Repetitive
Note *1
Maximum Avalanche current
IAS
17
A
Repetitive
Maximum Avalanche current
IAR
8.5
A
Gate(G)
Non-Repetitive
EAS
989
mJ Note *2
Source(S)
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
EAR
dVDS/dt
dV/dt
PD
Tch
17.0
40
5
170
3.13
+150
mJ Note *3
kV/µs VDS _=< 700V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
Note *1:Tch^<= 150°C
Note *2:StartingTch=25°C,IAS=6.8A,L=37.7mH,
VCC=100V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
Temperature range
Tstg
-55 to +150 °C
See to the ‘Transient Thermal impedance’
Isolation Voltage
VISO
2
kVrms t=60sec f=60Hz
graph.
Note *4:IF₌^< -ID, -di/dt=50A/µs,VCC₌^< BVDSS, Tch₌^< 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=700V VGS=0V
VDS=560V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=8.5A VGS=10V
ID=8.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=8.5A
VGS=10V
RGS=10 Ω
VCC=350V
ID=17A
VGS=10V
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
700
3.0
6.0
Typ.
0.47
12
1750
250
13
20
16
60
20
46
14
17
1.10
4
25
Max. Units
V
5.0 V
25
µA
250
100
nA
0.60 Ω
S
2625
pF
375
19.5
30
ns
24
90
30
69
nC
21
26
1.50 _V
µs
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.735 °C/W
40.0
°C/W
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