2SK3887-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3887-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220AB
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Ratings Unit Remarks
600
V
Drain(D)
Continuous Drain Current
VDSX
ID
600
V
VGS=-30V
9
A
Pulsed Drain Current
ID(puls]
±36
A
Gate-Source Voltage
VGS
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
9
462.3
A Note *1
mJ Note *2
16.5
mJ Note *3
20
5
165
2.02
+150
-55 to +150
kV/µs VDS_=< 600V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Source(S)
Note *1:Tch^<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH,
VCC=60V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF^<= -ID, -di/dt=50A/µs,VCC^<= BVDSS,Tch<=150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Min. Typ.
600
3.0
Max. Units
V
5.0 V
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=4.5A VGS=10V
ID=4.5A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V ID=4.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=300V
ID=9A
VGS=10V
IF=9A VGS=0V Tch=25°C
IF=9A VGS=0V
-di/dt=100A/µs _Tch=25°C
25
µA
250
100
nA
0.82
1.00 Ω
4.5 9.0
S
950 1425
pF
130
195
6.0
9.0
16
24
ns
6.0
9.0
33
50
5.5
8.3
25
38
nC
10
15
8.0
12
1.10
860
7.0
1.50 _V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.758 °C/W
62
°C/W
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