2SK3871-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3871-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220F
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Equivalent circuit schematic
Drain-source voltage
VDS
VDSX
230
V
230
V
VGS=-30V
Drain(D)
Continuous Drain Current
ID
40
A
Pulsed Drain Current
ID(puls]
±160
A
Gate-Source Voltage
VGS
Maximum Avalanche current
IAR
±30
V
40
A
Note *1
Gate(G)
Non-Repetitive
EAS
633.1
mJ Note *2
Source(S)
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
VISO
27
20
5
270
2.02
+150
-55 to +150
2
mJ Note *3
Note *1:Tch^<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=16A,L=4.09mH,
kV/µs VDS_=< 230V
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
kV/µs Note *4
and avalanch current.
W
Tc=25°C
See to the ‘Avalanche Energy’ graph
Ta=25°C
Note *3:Repetitive rating:Pulse width limited by
°C
maximum channel temperature.
°C
See to the ‘Transient Theemal impedance’
kVrms t=60sec f=60Hz
graph
Electrical characteristics (Tc =25°C unless otherwise specified)
Note *4:IF^<= -ID, -di/dt=50A/µs,VCC^<= BVDSS,Tch<=150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=230V VGS=0V
VDS=184V VGS=0V
VGS=±30V _VDS=0V
ID=20A VGS=10V
ID=20A VDS=25V
VDS=75V
VGS=0V
f=1MH
VCC=180V ID=20A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=115V
ID=40A
VGS=10V
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
230
3.0
12
Typ.
58
24
1880
230
12
28
8.4
56
6
42.0
18.0
12.0
1.10
230
2.5
Max. Units
V
5.0 V
25
µA
250
100
nA
76
mΩ
S
2820
pF
345
18
42
ns
12.6
84
9
63.0 nC
27.0
18.0
1.50 _V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58
°C/W
www.fujielectric.co.jp/fdt/scd
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