2SK3788-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3788-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breadown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
Ratings
150
150
92
±368
±30
92
1205.7
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
41
mJ Note *3
20
5
410
2.50
+150
-55 to +150
kV/µs VDS_=< 150V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Drain(D)
Gate(G)
Source(S)
Note *1:Tch^<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=37A,L=1.29mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF_=<-ID, -di/dt=50A/µs,VCC_=< BVDSS,Tch=< 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V Tch=25°C
VDS=120V VGS=0V
VGS=±30V _VDS=0V
ID=46A VGS=10V
Tch=125°C
ID=46A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=46A
VGS=10V
RGS=10 Ω
VCC=75V
ID=92A
VGS=10V
IF=92A VGS=0V Tch=25°C
IF=92A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
150
3.0
12
Typ.
21
24
3800
530
35
40
112
56
30
80
30
25
1.20
250
2.0
Max. Units
V
5.0 V
25
µA
250
100
nA
26
mΩ
S
5400
pF
795
52.5
60
ns
168
84
45
120
nC
45
38
1.50 _V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.305 °C/W
50.0 °C/W
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