2SK3779-01R Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3779-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Ratings Unit Remarks
250
V
Drain(D)
VDSX
250
V
VGS=-30V
Continuous Drain Current
ID
59
A
Pulsed Drain Current
Gate-Source Voltage
ID(puls]
VGS
±236
A
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
59
1115.2
A Note *1
mJ Note *2
41
mJ Note *3
20
5
210
3.13
+150
-55 to +150
kV/µs VDS_=< 250V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Source(S)
Note *1:Tch^<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=24A,L=3.25mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF₌^< -ID, -di/dt=50A/µs,VCC₌^< BVDSS, Tch₌^< 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=29.5A VGS=10V
ID=29.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=72V ID=29.5A
VGS=10V
Tch=25°C
Tch=125°C
Min. Typ.
250
3.0
43
12
24
3800
530
35
40
62
Max.
5.0
25
250
100
53
5400
795
52.5
60
93
Units
V
V
µA
nA
mΩ
S
pF
ns
Turn-Off Time toff
td(off)
tf
RGS=10 Ω
70
105
20
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
VSD
trr
Qrr
VCC=150V
ID=32A
VGS=10V
IF=59A VGS=0V Tch=25°C
IF=59A VGS=0V
-di/dt=100A/µs _Tch=25°C
80
120
nC
30
45
25
38
1.20
370
4.5
1.50 _V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.595 °C/W
40.0 °C/W
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