2SK3778-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3778-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breadown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Ratings Unit Remarks
250
V
Drain(D)
VDSX
250
V
VGS=-30V
Continuous Drain Current
ID
59
A
Pulsed Drain Current
Gate-Source Voltage
ID(puls]
VGS
±236
A
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
59
1115.2
A Note *1
mJ Note *2
41
mJ Note *3
20
5
410
2.50
+150
-55 to +150
kV/µs VDS_=< 250V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Source(S)
Note *1:Tch^<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=24A,L=3.25mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF₌^< -ID, -di/dt=50A/µs,VCC₌^< BVDSS, Tch₌^< 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Min. Typ.
250
3.0
Max. Units
V
5.0 V
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
IGSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
25
µA
250
100
nA
Drain-Source On-State Resistance
RDS(on)
ID=29.5A VGS=10V
43
53
mΩ
Forward Transcondutance
gfs
ID=29.5A VDS=25V
12
24
S
Input Capacitance
Ciss
VDS=75V
3800 5400
pF
Output Capacitance
Coss
VGS=0V
530
795
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Crss
td(on)
tr
td(off)
tf
f=1MHz
VCC=72V ID=29.5A
VGS=10V
RGS=10 Ω
35
52.5
40
60
ns
62
93
70
105
20
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
VSD
trr
Qrr
VCC=150V
ID=59A
VGS=10V
IF=59A VGS=0V Tch=25°C
IF=59A VGS=0V
-di/dt=100A/µs _Tch=25°C
80
120
nC
30
45
25
38
1.20
370
4.5
1.50 _V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.305 °C/W
50.0 °C/W
www.fujielectric.co.jp/fdt/scd
1