2SK3772-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3772-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings (mm) 200406
TO-220AB
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
300
VDSX
300
Continuous Drain Current
ID
32
Pulsed Drain Current
ID(puls]
±128
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
32
Non-Repetitive
EAS
597.4
Maximum Avalanche Energy
Repetitive
EAR
27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
270
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg
-55 to +150
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS_=<300V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch _=< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=13A,L= 6.13mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF_=< -ID, -di/dt = 50A/µs,VCC_=<BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=16A VGS=10V
ID=16A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=180V
ID=16A
VGS=10V
RGS=10 Ω
VCC=150V
ID=32A
VGS=10V
IF=32A VGS=0V Tch=25°C
IF=32A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
300
3.0
12
Typ.
0.10
24
1970
335
20
29
7.5
57
7
44.5
18
13.5
0.90
270
3.0
Max. Units
V
5.0 V
25
µA
250
µA
100
nA
0.13 Ω
S
2955
pF
502
30
44
ns
11
86
10.5
67
nC
27
20.5
1.50 _V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
62
°C/W
www.fujielectric.co.jp/fdt/scd
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