2SK3753-01R Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3753-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings (mm) 200406
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
Symbol
VDS
ID
ID(puls]
VGS
IAR
EAS
dVDS/dt
dV/dt
PD
Tch
Tstg
VISO
Ratings
600
±13
±52
±30
13
216.7
20
5
95
3.13
+150
-55 to +150
2
Equivalent circuit schematic
Unit Remarks
V
A
A
V
A Note *1
mJ Note *2
kV/µs VDS_=<600V
kV/µs Note *4
W ^Tc=25°C
Ta=25°C
°C
°C
kVrms ^{t=60sec. f=60Hz}
Drain(D)
Gate(G)
Source(S)
Note *1:Tch _=< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IL=2.36mH,VCC=60V
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Electrical characteristics (Tc =25°C unless otherwise specified)
Note *4:IF_=< -ID, -di/dt = 50A/µs,VCC_=< BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=6A VGS=10V
Tch=25°C
Tch=125°C
ID=6A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=6A
VGS=10V
RGS=10 Ω
VCC=300V
ID=12A
VGS=10V
L=2.36mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
600
3.0
5.5
13
Typ.
10
0.50
11
1600
160
7
18
16
35
8
34
12.5
11.5
1.00
0.75
6.5
Max.
5.0
25
250
100
0.65
2400
240
10.5
27
24
50
15
51
19
17.5
1.50
Units
V
V
µA
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
1.32
40.0
Units
°C/W
°C/W
1