2SK3728-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3728-01MR
FUJI POWER MOSFET
Super FAP-G Series
200305
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
VDS
VDSX *5
ID
ID(puls]
VGS
IAR
*2
EAS
*1
dVDS/dt *4
900
900
±2.2
±8.8
±30
2.2
127.2
40
V
V
A
A
V
A
mJ
kV/µs
Equivalent circuit schematic
Drain(D)
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.16
26
kV/µs
W
Gate(G)
Source(S)
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2000
Vrms
*1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch _=<150°C
*3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C _{*4 VDS<= 900V *5 VGS=-30V}
Electrical characteristics (Tc =25°C unless otherwise specified)
*6 f=60Hz, t=6-sec.
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V Tch=25°C
VDS=720V VGS=0V
VGS=±30V _VDS=0V
ID=1.1A VGS=10V
Tch=125°C
ID=1.1A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=1.1A
VGS=10V
RGS=10 Ω
VCC=450V
ID=2.2A
VGS=10V
L=48.2mH Tch=25°C
IF=2.2A VGS=0V Tch=25°C
IF=2.2A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ.
900
3.0
6.15
1.1 2.2
250
36
2.2
17
6
26
28
8.3
3.4
2.2
2.2
0.90
0.8
2.2
Max. Units
V
5.0
V
25
µA
250
100
nA
8.00 Ω
S
375
pF
55
3.3
26
ns
9
39
42
12.5
nC
5.1
3.3
A
1.50 _V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
4.808 °C/W
58.0 °C/W
1