2SK3696-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3696-01MR
FUJI POWER MOSFET
Super FAP-G Series
200309
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit Remarks
Drain-source voltage
VDS
500
V
Continuous drain current
ID
±13
A
Pulsed drain current
ID(puls]
±52
A
Gate-source voltage
VGS
±30
V
Non-Repetitive
IAS
Maximum avalanche current
13
A
Tch ^<=150°C
Non-Repetitive
EAS
202
mJ
*1
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak diode recovery dV/dt
dV/dt
5
kV/s VDS ^<= 500V
kV/µs *2
Peak diode recovery -di/dt
-di/dt
100
A/µs *3
Max. power dissipation
PD
2.16
W
Ta=25°C
70
Tc=25°C
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150 °C
Isolation voltage
VISO
2
kVrms ^{t=60sec f=60Hz}
*1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph
*2
*3
IIFF_<<==
-ID,
-ID,
d-dVi//ddtt==150k0VA/µ/µss, ^,VVCCCC_<=<=BBVVDDSSSS, ^{,TTcchh<=<=115500°C°C}
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=6.5A VGS=10V
ID=6.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=6.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=250V
ID=13A
VGS=10V
L=2.20mH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500
V
3.0
5.0 ^V
10
25
µA
1.0
2
mA
10
100
nA
0.42
5.5 11
0.55 Ω
S
1100 1650
pF
165
250
9
13.5
23
35
ns
6.5
11
47
71
7.5
12
28
42
nC
10
15
9
14
13
A
1.05
1.60 V
120
250
ns
0.5
1.2 µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
1.79
58.0
Units
°C/W
°C/W
1