2SK3691-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3691-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220F
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
600
VDSX
600
Continuous Drain Current
ID
4.5
Pulsed Drain Current
ID(puls]
±18
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
4.5
Non-Repetitive
EAS
261.1
Maximum Avalanche Energy
Repetitive
EAR
2.8
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
28
2.16
Operating and Storage
Tch
+150
Temperature range
Isolation Voltage
Tstg
VISO
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS_=<600V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
kVrms ^{t=60sec. f=60Hz}
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch _=< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=1.8A,L=148mH,
VCC=60V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF_=< -ID, -di/dt = 50A/µs,VCC_=<BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=600V VGS=0V
Tch=25°C
VDS=480V VGS=0V
VGS=±30V VDS=0V
Tch=125°C
ID=2.25A VGS=10V
ID=2.25A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=2.25A
VGS=10V
RGS=10 Ω
VCC=300V
ID=4.5A
VGS=10V
IF=4.5A VGS=0V Tch=25°C
IF=4.5A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ.
600
3.0
10
1.8
2.5 5
400
60
3
18
4
30
5
15
5.5
3
1.00
0.7
3.5
Max. Units
V
5.0 V
25
µA
250
µA
100
nA
2.3 Ω
S
600
pF
90
5
27
ns
6
45
7.5
23
nC
8
4.5
1.50 _V
µs
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
4.464 °C/W
58
°C/W
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