2SK3687-01MR_05 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3687-01MR ^{FUJI POWER MOSFET}
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
VDS
600
V
VDSX
600
V VGS=-30V
Continuous drain current
ID
±16
A
Pulsed drain current
ID(puls]
±64
A
Gate-source voltage
Repetitive or non-repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
VGS
IAR
EAS
dVDS/dt
±30
16
242.7
20
V
A Tch ^<=150°C
mJ *1
kV/μs VDS<= 600V
Peak diode recovery dV/dt
dV/dt
5
kV/μs *2
Max. power dissipation
PD
Operating and storage
Tch
2.16 W
97
+150
°C
Ta=25°C
Tc=25°C
temperature range
Tstg
-55 to +150 °C
Isolation voltage
VISO
2
kVrms t=60sec, f=60Hz
*1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph
*2 IF^<= -ID, -di/dt=50A/μs, Vcc ^<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250^μA VGS=0V
ID= 250^μA VDS=VGS
VDS=600V VGS=0V Tch=25°C
VDS=480V VGS=0V
VGS=±30V _VDS=0V
ID=8A VGS=10V
Tch=125°C
ID=8A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8A
VGS=10V
RGS=10 Ω
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/μs _Tch=25°C
600
V
3.0
5.0
V
25
μA
250
10
100
nA
0.42
0.57 Ω
6.5 13
S
1590 2390
pF
200
300
11
17
29
43.5 ^ns
16
24
58
87
8
12
34
51
nC
12
18
10
15
16
A
1.00
1.50 _V
0.68
μs
7.8
μC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.289 °C/W
58.0 °C/W
1