2SK3684-01L Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3684-01L,S,SJ
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Features
Outline Drawings [mm]
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
P4
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol Ratings
VDS
500
VDSX
500
Continuous drain current
ID
±19
Pulsed drain current
ID(puls]
±76
Gate-source voltage
VGS
±30
Non-Repetitive
IAS
19
Maximum avalanche current
Non-Repetitive
EAS
245.3
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak diode recovery dV/dt
dV/dt
5
Max. power dissipation
PD
1.67
270
Operating and storage
Tch
+150
temperature range
Tstg
-55 to +150
*2 See to Avalanche Energy Graph
*3 IF^<= -ID, -di/dt=50A/µs, VCC^<= BVDSS, Tch<= 150°C
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Tch ^<=150°C
mJ
kV/s
kV/µs
W
°C
°C
L=1.25mH
VCC=50V *2
VDS<=500V
*3
Ta=25°C
Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=9.5A VGS=10V
ID=9.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=9.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=250V
ID=19A
VGS=10V
L=1.25mH Tch=25°C
IF=19A VGS=0V Tch=25°C
IF=19A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ. Max. Units
500
V
3.0
5.0 V
25
µA
250
10
100
nA
0.29
0.38 Ω
7.5 15
S
1560 2340
pF
230
345
8
12
29
43.5 ^ns
13
19.5
56
84
8
12
34
51
nC
13
19.5
10
15
19
A
1.20
1.50 V
0.57
µs
7.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
75.0 °C/W
1