2SK3683 Datasheet, PDF (1/1 Pages) Fuji Electric – Fuji Power MOSFET SuperFAP-G series Target Specification

PRELIM INARY
2SK3683-01MR (500V/0.38_Ω/19A)
1) Package
TO-220F15R
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
V_DS
I_D
I_{D (puls e)}
V_GS
I_AR
E_AS
dVDS/dt
dV/dt
500
±19
±76
±30
19
245.3
20
5
Maximum Power Dissipation
Operating and Storage
Temperature range
P_D
c =25
P_{D @Ta=25}
T_ch
T_{s t g}
95
2.16
150
-55 +150
Units
V
A
A
V
A
mJ _*1
kV/us
kV/us *2
W
W
ˆ
ˆ
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min.
Drain-Source Breakdown Voltage
BV_DSS
I_D=250uA
V_GS=0V
500
Gate Threshold Voltage
V_GS(th)
I_D=250uA
V_DS=V_GS
3.0
Zero Gate Voltage Drain Current
I_{D SS}
V_DS=500V
T_ch=25ˆ
---
V_GS=0V
T_ch=125_ˆ
---
Gate-Source Leakage Current
I_GSS
V_GS=±30V
V_DS=0V
---
Drain-Source On-State Resistance R_DS(on) I_D=9.5A
VGS=10V
---
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
C_iss
C_{os s}
C_rss
Qg
Qgs
Qgd
I_AV
V_SD
V_DS=25V
---
V_GS=0V
---
f=1MHz
---
Vcc=250V
---
I_D=19A
---
V_GS=10V
---
L=1.25mH
Tch=25ˆ
19
I_F=19A,VGS=0V,Tch=25
---
typ.
---
---
---
---
---
---
1580
240
12
32
16
12
---
1.0
max.
---
5.0
25
250
100
0.38
2370
360
18
48
24
18
---
1.5
Units
V
V
A
A
A
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
*1 L=1.25mH,Vcc=50V
F≤ D
µ
≤ DSS
≤°
Test Conditions
min.
typ.
max. Units
1.316
58.0
ˆ/W
ˆ/W
DATE
DRAWN ĚĬķõô÷ùôî÷ù
CHECKED ĚĬķõô÷ùôî÷ù
REVISIONS
MA4LE
NAME
APPROVED
Fuji Electric Co.,Ltd.
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