2SK3681-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3681-01
FUJI POWER MOSFET
Super FAP-G Series
200401
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching
Low on-resistance
No secondary breadown Low driving power
11.6±0.2
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit Remarks
Drain-source voltage
VDS
600
V
VDSX
600
V
VGS=-30V
Continuous drain current
ID
±43
A
Pulsed drain current
ID(puls]
±172
A
Gate-source voltage
VGS
±30
V
Non-Repetitive
IAS
43
A
Tch=25°C
Maximum avalanche current
Repetitive or
IAR
*1
21.5
A
Tch<=150°C
Maximum avalanche current
*1
Non-Repetitive
EAS
808.9
mJ L=802µH
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
20
VCC=60V *2
kV/s VDS<=600V
Peak diode recovery dV/dt
dV/dt
5
kV/µs *3
Max. power dissipation
PD
2.50
W
Ta=25°C
600
Tc=25°C
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150 °C
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 IF ^<= -ID, -di/dt=50A/µs, VCC^<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=26A VGS=10V
ID=21.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=21.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=300V
ID=43A
VGS=10V
L=802µH Tch=25°C
IF=43A VGS=0V Tch=25°C
IF=43A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600
V
3.0
5.0
V
25
µA
250
10
100
nA
0.12
0.16 Ω
15
30
S
5360 8040
pF
680 1020
40
60
80
120
ns
87
131
190
285
44
66
112
168
nC
34
51
40
60
43
A
1.00
1.50 _V
0.98
µs
22.0
µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.208 °C/W
50.0 °C/W
1