2SK3679 Datasheet, PDF (1/1 Pages) Fuji Electric – Fuji Power MOSFET SuperFAP-G series Target Specification

PRELIMINARY
2SK3679-01MR (900V/1.58Ω/9A)
1) Package
TO-220F
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
V_DS
I_D
I_D(pulse)
V_GS
I_AR
E_AS
dVDS/dt
900
±9
±36
±30
9
287.7
20
Peak Diode recovery dV/dt
dV/dt
5
Maximum Power Dissipation
Operating and Storage
Temperature range
P_{D c=25}
P_{D @Ta=25}
T_ch
T_stg
95
2.16
150
-55 +150
Units
V
A
A
V
A
mJ _*1
kV/us
kV/us *2
W
W
ˆ
ˆ
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min.
Drain-Source Breakdown Voltage BV_DSS I_D=250uA V_GS=0V
900
Gate Threshold Voltage
V_GS(th) I_D=250uA V_DS=V_GS
3.0
Zero Gate Voltage Drain Current I_DSS
V_DS=900V T_ch=25ˆ
---
V_GS=0V
T_ch=125ˆ ---
Gate-Source Leakage Current I_GSS
V_GS=±30V V_DS=0V
---
Drain-Source On-State Resistance R_DS(on) I_D=4.5A
VGS=10V ---
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain (Miller) Charge
Qgd
Avalanche Capability
I_AV
Diode Forward On-Voltage
V_SD
V_DS=25V
---
V_GS=0V
---
f=1MHz
---
Vcc=450V
---
I_D=9A
---
V_GS=10V
---
L=6.51mH Tch=25ˆ 12
I_F=9A,VGS=0V,Tch=25
---
typ.
---
---
---
---
---
---
1200
140
7
32
7
7
---
1.0
max.
---
5.0
25
250
100
1.58
---
---
---
---
---
---
---
1.5
Units
V
V
A
A
nA
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min. typ. max. Units
1.316 ˆ/W
58.0 ˆ/W
*1 L=6.51mH,Vcc=90V
F^≤ D
µ
≤ _DSS ≤ °
REVISIONS
DATE
DRAWN ĚĬķõôø÷ôî÷ù
CHECKED ĚĬķõôø÷ôî÷ù
MA4LE
NAME
APPROVED
Fuji Electric Co.,Ltd.
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