2SK3674-01L Datasheet, PDF (1/4 Pages) Fuji Electric – Power MOSFET SuperFAP-G series Target Specification

1) Package
PRELIMINARY
2SK3674-01L,S,SJ (900V/2.0Ω/7A)
T-PACK L
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
V_DS
900
Continuous Drain Current
I_D
±7
Pulsed Drain Current
I_D(pulse)
±28
Gate-Source Voltage
V_GS
Repetitive and Non-Repetitive
Maximum Avalanche Current
I_AR
Non-Repetitive
Maximum Avalanche Energy
E_AS
±30
7
269.5
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode recovery dV/dt
dV/dt
5
Maximum Power Dissipation
P_{D c=25}
P_{D @Ta=25}
225
1.67
Operating and Storage
T_ch
150
Temperature range
T_stg
-55 +150
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min. typ.
Drain-Source Breakdown Voltage BV_DSS I_D=250uA V_GS=0V
900
---
Gate Threshold Voltage
V_GS(th) I_D=250uA
V_DS=V_GS
3.0
---
Zero Gate Voltage Drain Current I_DSS
V_DS=900V T_ch=25ˆ
---
V_GS=0V
T_ch=125ˆ ---
---
---
Gate-Source Leakage Current
I_GSS
V_GS=±30V V_DS=0V
---
---
Drain-Source On-State Resistance R_DS(on) I_D=3.5A
VGS=10V ---
---
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain (Miller) Charge
Qgd
Avalanche Capability
I_AV
Diode Forward On-Voltage
V_SD
V_DS=25V
---
980
V_GS=0V
---
120
f=1MHz
---
6
Vcc=450V
---
28
I_D=7A
---
9
V_GS=10V
---
8
L=10.1mH Tch=25ˆ
7
---
I_F=7A,VGS=0V,Tch=25
---
1.0
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
*1 L=10.1mH,Vcc=90V
F^≤ D
µ
≤ _DSS ≤ °
Test Conditions
min. typ.
Units
V
A
A
V
A
mJ _*1
kV/us
kV/us *2
W
W
ˆ
ˆ
max.
---
5.0
50
500
100
2.0
---
---
---
---
---
---
---
1.5
Units
V
V
µA
µA
nA
Ω
pF
nC
A
V
max.
0.56
75.0
Units
ˆ/W
ˆ/W
REVISIONS
DATE
DRAWN ĚĬķõôø÷ôî÷ù
CHECKED ĚĬķõôø÷ôî÷ù
MA4LE
NAME
APPROVED
Fuji Electric Co.,Ltd.
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