2SK3613-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3613-01
FUJI POWER MOSFET
Super FAP-G Series
200304
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOS FET
O^OUu^{T V}t^IEl^Wine Drawiinnggss ((mmmm))
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250
V
Continuous drain current
Pulsed drain current
VDSX *5
220
V
ID Tc=25°C
±14
A
Ta=25°C
±2.2 ^**
A
ID(puls]
±56
A
Gate-source voltage
VGS
Non-repetitive Avalanche current IAS *2
±30
V
14
A
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
EAS *1
dVDS/dt *4
129.1
20
mJ
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
105
2.4 **
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
*1 L=1.11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch ^<=150°C
*3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 250V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
MARKING
Fig.1
Fig.1
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
Special
specification
for customer
CON1N1ECGGTI:O:GNGaatete _D
22 SS11: :SSoouurcrcee11
Lot No.
33 SS22: :SSoouurcrcee22
4G4 DD: :DDrarainin
Type name
S1
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=5A VGS=10V
ID=5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=5A
VGS=10V
RGS=10 Ω
VCC=125V
ID=10A
VGS=10V
L=1.11mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
250
3.0
5
14
Typ. Max. Units
V
5.0
V
25
µA
250
10
100
nA
200
260
mΩ
10
S
785 1178
pF
88
132
4
6
12
18
ns
2.7
4.1
22
33
7.4
11.1
21
31.5
nC
8
12
5
7.5
A
1.10
1.65 V
0.155
µs
1.05
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a) **
Test Conditions
channel to case
channel to ambient
channel to ambient
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
www.fujielectric.co.jp/denshi/scd
Min. Typ.
Max. Units
1.191 °C/W
87.0 °C/W
52.0 °C/W
1