2SK3605-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3605-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
V
VDSX *5
120
V
Continuous drain current
ID Tc=25°C
±23
A
Ta=25°C
±3.1 ^**
A
Pulsed drain current
ID(puls]
±92
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
23
A
Maximum Avalanche Energy
EAS *1
130.9
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
105
2.4 **
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
*1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch ^<=150°C
*3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 150V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Foot Print Pattern
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V VDS=0V
ID=8A VGS=10V
Tch=25°C
Tch=125°C
ID=8A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=8A
VGS=10V
RGS=10 Ω
VCC=75V
ID=16A
VGS=10V
L=363µH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
150
3.0
6
23
Typ.
10
79
12
760
130
6
12
2.8
22
6.2
21
9
6
1.10
0.13
0.59
Max. Units
V
5.0
V
25
µA
250
100
nA
105
mΩ
S
1140
pF
195
9
18
ns
4.2
33
9.3
31.5
nC
13.5
9
A
1.65 _V
µs
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Thermal resistance
Rth(ch-c)
Rth(ch-a)
channel to case
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
Min. Typ.
Max. Units
1.191 °C/W
87.0 ^°C/W
52.0 °C/W
1