2SK3601-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3601-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICO^FN^UJI POWER ^{POWER MOS FET} MOSFET
O^OUu^{T VI}t^EWline Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
MARKING
Fig.1
Fig.1
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
V
VDSX *5
70
V
Continuous drain current
ID Tc=25°C
±20
A
Ta=25°C
±4.4
A
Pulsed drain current
ID(puls]
±80
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
20
A
Maximum Avalanche Energy
EAS *1
227
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
50
2.4 **
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
*1
*4
LV=_D6_S81<=µ_{1H0,0VVcc=4*58VVGS=*2-3T0cVh<=150°C}
*3 IF^<= -ID, -di/dt=50A/µs, Vcc ^<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
Special
specification
for customer
Lot No.
Type name
CON1N1ECGGTI:O:GNGaatete _D
22 SS11: :SSoouurcrcee11
33 SS22: :SSoouurcrcee22
4G4 DD: :DDrarainin
S1
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=10A VGS=10V
ID=10A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=10A
VGS=10V
RGS=10 Ω
VCC=50V
ID=20A
VGS=10V
L=100µH Tch=25°C
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
100
3.0
6
20
Typ. Max. Units
V
5.0
V
25
µA
250
10
100
nA
47
62
mΩ
12
S
730 1095
pF
190
285
12
18
12
18
ns
3.8
6
23
35
8.5
13
22
33
nC
9
13.5
6
9
1.10
65
0.17
A
1.65 _V
ns
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Thermal resistance
Rth(ch-c)
Rth(ch-a)
channel to case
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
Min. Typ.
Max.
2.5
87.0
52.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
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