2SK3597 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3597-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICO_FN_UJI POWER _{POWER MOS FET} MOSFET
O^OUu^{T VI}t^EWline Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
MARKING
Fig.1
Fig.1
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200
V
Continuous drain current
VDSX *5
170
V
ID Tc=25°C
±30
A
Ta=25°C
±4.3 **
A
Pulsed drain current
ID(puls]
±120
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
30
A
Maximum Avalanche Energy
EAS *1
387
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
135
2.4
kV/µs
W
Operating and storage
Tch
temperature range
Tstg
+150
°C
-55 to +150
°C
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
*1 L=689µH, Vcc=48V *2 Tch<=150°C ^{*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C}
*4 VDS ^<= 200V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Special
specification
for customer
Lot No.
Type name
CON1N1ECGGTI:O:GNGaatete _D
22 SS11: :SSoouurcrcee11
33 SS22: :SSoouurcrcee22
4G4 DD: :DDrarainin
S1
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
ID=15A VGS=10V
Tch=25°C
Tch=125°C
ID=15A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
VCC=100V
ID=30A
VGS=10V
L=100µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
200
V
3.0
5.0 V
25
µA
250
10
100
nA
50
12.5 25
66
mΩ
S
1960 2940
pF
260
390
18
27
20
30
ns
17
26
53
80
19
29
51
76.5 nC
15
22.5
16
24
30
A
1.10
1.65 _V
0.19
µs
1.4
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
www.fujielectric.co.jp/denshi/scd
Min. Typ.
Max. Units
0.926 °C/W
87.0 °C/W
52.0
1