2SK3589 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3589-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOS FET
O^OUu^{T V}t^IEl^Wine Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Fig.1
Low driving power
MARKING
Avalanche-proof
Fig.1
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
V
VDSX *5
70
V
Continuous drain current
ID Tc=25°C
±50
A
Ta=25°C
±6.9 **
A
Pulsed drain current
ID(puls]
±200
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
50
A
Maximum Avalanche Energy
EAS *1
465
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Tc=25°C
123
W
Ta=25°C
2.4
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
*1 L=223µH, Vcc=48V *2 Tch<=150°C *3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
*4 VDS ^<=100V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Special
specification
for customer
Lot No.
Type name
CON1N1ECGGTI:O:GNGaatete _D
22 SS11: :SSoouurcrcee11
33 SS22: :SSoouurcrcee22
4G4 DD: :DDrarainin
S1
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=25A VGS=10V
ID=25A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=25A
VGS=10V
RGS=10 Ω
VCC=50V
ID=50A
VGS=10V
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ. Max. Units
100
V
3.0
5.0
V
25
µA
250
10
100
nA
19
25
mΩ
19
25
S
1830 2745
pF
460
690
38
57
20
30
ns
35
53
50
75
23
35
52
78
nC
16
24
18
27
50
A
1.10
1.65 _V
0.1
µs
0.4
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Test Conditions
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area : 500mm²)
www.fujielectric.co.jp/denshi/scd
Min. Typ.
Max.
0.93
87.0
52.0
Units
°C/W
°C/W
°C/W
1