2SK3588-01L_03 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3588-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
See to p4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
V
VDSX *5
70
V
Continuous drain current
ID
±73
A
Pulsed drain current
ID(puls]
±292
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
73
A
Maximum Avalanche Energy
EAS *1
319.2
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
2.02
W
Tc=25°C
270
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=71.9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch<=150°C
*3 IF^<= -ID, -di/dt=50A/µs, Vcc ^<= BVDSS, Tch<= 150°C *4 VDS ^<=100V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V Tch=25°C
VDS=80V VGS=0V
VGS=±30V VDS=0V
ID=25A VGS=10V
Tch=125°C
ID=25A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=25A
VGS=10V
RGS=10 Ω
VCC=50V
ID=50A
VGS=10V
L=71.9µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
100
V
3.0
5.0
V
25
µA
250
10
100
nA
19
25
mΩ
15
30
S
1830 2745
pF
460
690
38
57
20
30
ns
35
53
50
75
23
35
52
78
nC
16
24
18
27
73
A
1.10
1.65 _V
0.1
µs
0.4
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
75.0 °C/W
1