2SK3580-01MR_03 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3580-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
300
V
VDSX *5
270
V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±15
±60
A
A
Equivalent circuit schematic
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR *2
15
A
Drain(D)
Maximum Avalanche Energy
EAS *1
155
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
W
48
Gate(G)
Operating and storage
Tch
+150
°C
Source(S)
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2
*1 L=1.2mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch<=150°C
kVrms
*3 IF^<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C ^{*4 VDS} =< ^{300V *5 VGS=-30V *6 t=60sec f=60Hz}
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=300V VGS=0V
Tch=25°C
VDS=240V VGS=0V
VGS=±30V VDS=0V
ID=6A
VGS=10V
Tch=125°C
ID=6A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=150V ID=6A
VGS=10V
RGS=10 Ω
VCC=150V
ID=12A
VGS=10V
L=1.0mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
300
3.5
5
15
Typ. Max. Units
V
4.5
V
25
µA
250
10
100
nA
0.22
0.28 Ω
10.5
S
980 1470
pF
170
255
5.5
11
14.5
29
ns
6.5
9.8
28
42
4
6
23
34.5 nC
9.7
14.6
5.6
11.2
A
1.20
1.80 V
0.2
µs
1.80
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
2.6
58.0
Units
°C/W
°C/W
1