2SK3579-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3579-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Symbol
VDS
VDSX *5
ID
ID(puls]
VGS
IAR *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
Ratings
150
130
±23
±96
±20
23
242
20
5
2.1
40
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2
kVrms
*1 L=0.67mH, Vcc=48V *2 Tch<=150°C *3 IF^<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
*4 VDS_=<250V *5 VGS=-20V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±20V VDS=0V
ID=11.5A VGS=10V
Tch=25°C
Tch=125°C
Min. Typ.
150
1.0
10
65
Max.
2.5
25
250
100
90
Units
V
V
µA
nA
mΩ
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Internal Resistance
(Tep.Confficient)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
Rg
∆Rg/∆Τch
IAV
VSD
trr
Qrr
ID=11.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=11.5A
VGS=10V
RGS=10 Ω
VCC=48V
ID=23A
VGS=10V
L=100µH Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs Tch=25°C
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
12
24
S
1470 2200
pF
190
285
18
27
24
36
ns
23
35
300
450
45
68
48
72
nC
6
9
12
18
23.3 39
54.4 Ω
0.12
%/°C
23
A
1.10
1.65 V
0.13
µs
0.6
µC
Min. Typ.
Max. Units
3.125 °C/W
58.0 °C/W
1